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| BPX 48 BPX 48 F Silizium-Differential-Fotodiode Silicon Differential Photodiode BPX 48 BPX 48 F Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Bereich von 400 nm bis 1100 nm (BPX 48) und bei 920 nm (BPX 48 F) q Hohe Fotoempfindlichkeit q DIL-Plastikbauform mit hoher Packungsdichte q Doppeldiode mit extrem hoher Gleichmaigkeit Anwendungen Nachlaufsteuerung Kantenfuhrungen Weg- bzw. Winkelabtastungen Industrieelektronik "Messen/Steuern/Regeln" Features q Especially suitable for applications from 400 nm to 1100 nm (BPX 48) and of 920 nm (BPX 48 F) q High photosensitivity q DIL plastic package with high packing density q Double diode with extremely high homogeneousness Application q Follow-up control q Edge control q Path and angle scanning q Industrial electronics q For control and drive circuits q q q q q Semiconductor Group 348 10.95 feof6638 feo06638 BPX 48 BPX 48 F Typ Type BPX 48 BPW 48 F Grenzwerte Maximum Ratings Bezeichnung Description Bestellnummer Ordering Code Q62702-P17-S1 Q62702-P305 Symbol Symbol Wert Value - 40 ... + 80 230 Einheit Unit C C Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur (Lotstelle 2 mm vom Gehause entfernt bei Lotzeit t 3 s) Soldering temperature in 2 mm distance from case bottom (t 3 s) Sperrspannung Reverse voltage Verlustleistung, TA = 25 C Total power dissipation Top; Tstg TS VR Ptot 10 50 V mW Kennwerte (TA = 25 C) fur jede Einzeldiode Characteristics (TA = 25 C) per single diode system Bezeichnung Description Fotoempfindlichkeit Spectral sensitivity VR = 5 V, Normlicht/standard light A, T = 2856 K, VR = 5 V, = 950 nm, Ee = 0.5 mW/cm2 Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Symbol Symbol BPX 48 Wert Value BPX 48 F Einheit Unit S S S max 24 ( 15) - 900 - 7.5 ( 4.0) 920 nA/Ix A nm 400 ... 1150 750 ... 1150 nm A 1.54 1.54 mm2 Semiconductor Group 349 BPX 48 BPX 48 F Kennwerte (TA = 25 C) fur jede Einzeldiode Characteristics (TA = 25 C) per single diode system Bezeichnung Description Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Dunkelstrom, VR = 10 V Dark current Spektrale Fotoempfindlichkeit Spectral sensitivity = 850 nm = 950 nm Max. Abweichung der Fotoempfindlichkeit der Systeme vom Mittelwert Max. deviation of the system spectral sensitivity from the average Quantenausbeute Quantum yield = 850 nm = 950 nm Leerlaufspannung Open-circuit voltage Ev = 1000 Ix, Normlicht/standard light A, T = 2856 K Ee = 0.5 mW/cm2, = 950 nm Kurzschlustrom Short-circuit current Ev = 1000 Ix, Normlicht/standard light A, T = 2856 K Ee = 0.5 mW/cm2, l = 950 nm Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 1 k; VR = 5 V; = 850 nm; Ip = 20 A Durchlaspannung, IF = 40 mA, E = 0 Forward voltage Symbol Symbol BPX 48 Wert Value BPX 48 F 0.7 x 2.2 mm 0.7 x 2.2 Einheit Unit LxB LxW H 0.5 0.5 mm 60 10 ( 100) 60 10 ( 100) Grad deg. nA IR S S S 0.55 - 5 - 0.65 5 A/W % Electrons Photon 0.8 - - 0.95 VO VO 330 ( 280) - - 300 ( 280) mV mV ISC ISC t r, t f 24 - 500 - 7 500 A A ns VF 1.3 1.3 V Semiconductor Group 350 BPX 48 BPX 48 F Kennwerte (TA = 25 C) fur jede Einzeldiode Characteristics (TA = 25 C) per single diode system Bezeichnung Description Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Normlicht/standard light A = 950 nm Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V, = 950 nm Nachweisgrenze, VR = 10 V, = 950 nm Detection limit Symbol Symbol BPX 48 Wert Value BPX 48 F 25 - 2.6 pF mV/K 25 - 2.6 Einheit Unit C0 TCV TCI TCI NEP 0.18 - 1.0 x 10-13 - 0.2 1.0 x 10-13 %/K %/K W Hz cm * Hz W D* 1.2 x 1012 1.2 x 1012 Directional characteristics Srel = f () Semiconductor Group 351 BPX 48 BPX 48 F Relative spectral sensitivity BPX 48 Srel = f () Relative spectral sensitivity BPX 48 F Srel = f () Photocurrent IP = f (Ev), VR = 5 V Open-circuit-voltage VO = f (Ev) BPX 48 Photocurrent IP = f (Ee), VR = 5 V Open-circuit-voltage VO = f (Ee) BPX 48 F Total power dissipation Ptot = f (TA) Dark current IR = f (VR), E = 0 Capacitance C = f (VR), f = 1 MHz, E = 0 Dark current IR = f (TA), VR = 10 V Semiconductor Group 352 |
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